An efficient electron transport material of tin oxide for planar structure perovskite solar cells
作者： Govindhasamy Murugadoss , Hiroyuki Kanda , Soichiro Tanaka , Hitoshi Nishino , Seigo Ito
DOI: 10.1016/J.JPOWSOUR.2016.01.044
关键词: Anti-reflective coating 、 Annealing (metallurgy) 、 Electronic engineering 、 Electron mobility 、 Perovskite solar cell 、 Band gap 、 Energy conversion efficiency 、 Optoelectronics 、 Solar cell 、 Photovoltaic system 、 Materials science
摘要: Abstract The photovoltaic performance of a perovskite solar cell based on new electron conducting SnO2 film prepared at low temperature using different solvents was investigated. selected as an medium due to its superior properties over TiO2, such better antireflective properties, higher mobility, more suitable band edges and wider gap. A layer developed by spin-coating SnCl2 solution followed annealing 200 °C in air. low-temperature (200 °C) annealed exhibits enhanced crystallization, high transmittance, uniform surface morphology ethanol solvent rather than water. Solid state CuSCN hole conductor used HTM for reducing the device cost. planar fabricated with CH3NH3PbI3 infiltrated showed power conversion efficiency 8.38% short-circuit current density 18.99 mA cm−2, open-circuit voltage 0.96 mV fill factor 45%. devices were >60% humidity level room temperature. results suggest that is effective charge collection system cells. In addition, these provide direction future improvement cells layers.
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