Non-ohmic conductivity of barely localized electrons in three dimensions

作者: T.F Rosenbaum , K Andres , G.A Thomas

DOI: 10.1016/0038-1098(80)90869-8

关键词: Bohr radiusElectronRaman scatteringChemistryCondensed matter physicsConductivityMagnetic susceptibilityDopingElectric fieldAbsorption (electromagnetic radiation)

摘要: We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in carefully characterized sample P doped Si. These results, combined with measurements Raman scattering, far-infrared absorption magnetic susceptibility, indicate large characteristic electronic length (10^4 times donor Bohr radius) at concentration just below critical density metal-insulator transition.

参考文章(19)
F. Mousty, P. Ostoja, L. Passari, Relationship between resistivity and phosphorus concentration in silicon Journal of Applied Physics. ,vol. 45, pp. 4576- 4580 ,(1974) , 10.1063/1.1663091
David E. Schafer, Fred Wudl, Gordon A. Thomas, John P. Ferraris, Dwaine O. Cowan, Apparent giant conductivity peaks in an anisotropic medium: TTF-TCNQ Solid State Communications. ,vol. 14, pp. 347- 351 ,(1974) , 10.1016/0038-1098(74)90915-6
W. Sasaki, Y. Ootuka, F. Komori, Y. Monden, S. Kobayashi, Variable range hopping in Si:P at very low temperature Solid State Communications. ,vol. 33, pp. 793- 795 ,(1980) , 10.1016/0038-1098(80)90833-9
M. Capizzi, G.A. Thomas, F. DeRosa, R.N. Bhatt, T.M. Rice, Observation of a donor exciton band in silicon Solid State Communications. ,vol. 31, pp. 611- 616 ,(1979) , 10.1016/0038-1098(79)90308-9
N. Apsley, H. P. Hughes, Temperature- and field-dependence of hopping conduction in disordered systems, II Philosophical Magazine. ,vol. 31, pp. 1327- 1339 ,(1974) , 10.1080/00318087508228686
S. Kobayashi, Y. Monden, W. Sasaki, Variable range hopping conduction in the lowest temperature region Solid State Communications. ,vol. 30, pp. 661- 663 ,(1979) , 10.1016/0038-1098(79)90117-0
Nevill F. Mott, E. A. Davis, Kurt Weiser, Electronic processes in non-crystalline materials ,(1940)
Robert M. Hill, Hopping conduction in amorphous solids Philosophical Magazine. ,vol. 24, pp. 1307- 1325 ,(1971) , 10.1080/14786437108217414
Kanti Jain, Shui Lai, Miles V. Klein, Electronic Raman scattering and the metal-insulator transition in doped silicon Physical Review B. ,vol. 13, pp. 5448- 5464 ,(1976) , 10.1103/PHYSREVB.13.5448