作者: T.F Rosenbaum , K Andres , G.A Thomas
DOI: 10.1016/0038-1098(80)90869-8
关键词: Bohr radius 、 Electron 、 Raman scattering 、 Chemistry 、 Condensed matter physics 、 Conductivity 、 Magnetic susceptibility 、 Doping 、 Electric field 、 Absorption (electromagnetic radiation)
摘要: We observe a rapid temperature variation and an electric field dependence of the d.c. conductivity in carefully characterized sample P doped Si. These results, combined with measurements Raman scattering, far-infrared absorption magnetic susceptibility, indicate large characteristic electronic length (10^4 times donor Bohr radius) at concentration just below critical density metal-insulator transition.