Performance of low-loss RF MEMS capacitive switches
作者： C.L. Goldsmith , Zhimin Yao , S. Eshelman , D. Denniston
DOI: 10.1109/75.704410
关键词: Optoelectronics 、 Microelectromechanical systems 、 Figure of merit 、 Electrical engineering 、 Surface micromachining 、 Microwave 、 Cutoff frequency 、 Radio frequency 、 Capacitive sensing 、 Materials science 、 Capacitance
摘要: 'This letter details the construction and performance of metal membrane radio frequency MEMS switches at microwave millimeter-wave frequencies. These shunt possess a movable which pulls down onto metal/dielectric sandwich to form capacitive switch. exhibit low loss (<0.25 dB 35 GHz) with good isolation (35 GHz). devices on-off capacitance ratios in range 80-110 cutoff (figure merit) excess 9000 GHz, significantly better than that achievable electronic switching devices.
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memtronics.com参考文章(7)
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