Atomic Layer Deposition of TiN Films by Alternate Supply of Tetrakis(ethylmethylamino)-Titanium and Ammonia

摘要: Atomic layer deposition (ALD) of amorphous TiN films on SiO2 between 170°C and 210°C has been investigated by alternate supply reactant sources, Ti[N(C2H5CH3)2]4 [tetrakis(ethylmethylamino)titanium:TEMAT] NH3. Reactant sources were injected into the reactor in following order:TEMAT vapor pulse, Ar gas NH3 pulse pulse. Film thickness per cycle was saturated at around 1.6 monolayers (ML) with sufficient times 200°C. The results suggest that film could exceed 1 ML/cycle ALD, are explained rechemisorption mechanism sources. An ideal linear relationship number cycles is confirmed. As a result surface limited reactions step coverage excellent. Particles caused phase TEMAT almost absent because segregated from In spite relatively low substrate temperature, carbon impurity incorporated below 4 at.%.