作者: R. H. Miles , D. H. Chow , Y.‐H. Zhang , P. D. Brewer , R. G. Wilson
DOI: 10.1063/1.113277
关键词: Superlattice 、 Molecular beam epitaxy 、 Semiconductor laser theory 、 Luminescence 、 Infrared 、 Materials science 、 Stimulated emission 、 Optoelectronics 、 Laser 、 Infrared spectroscopy
摘要: Use of a cracked Sb source and a postgrowth anneal procedure has been found to yield significant improvements in optical efficiencies of GaInSb/InAs superlattices grown by molecular …