Germanium Nanowires as Sensing Devices: Modelization of Electrical Properties.

摘要: In this paper, we model the electrical properties of germanium nanowires with a particular focus on physical mechanisms molecular sensing. We use Tibercad software to solve drift-diffusion equations in 3D and validate against experimental data, considering p-doped nanowire surface traps. simulate three different types interactions: (1) Passivation traps; (2) Additional charges; (3) Charge transfer from molecules nanowires. By analyzing simulated I–V characteristics, observe that: (i) largest change current occurs negative charges surfaces; (ii) charge provides relevant changes only for very high values additional doping; (iii) certain n-doping ambipolar currents could be obtained. The results these simulations highlight complexity sensing mechanism nanowires, that depends not NW parameters but also molecules. expect findings will valuable extend knowledge by fundamental step develop novel sensors based nanostructures.