Electron-hole counts in Al-substituted MgB2 superconductors from x-ray Raman scattering

作者: A. Mattila , J. A. Soininen , S. Galambosi , T. Pylkkänen , S. Huotari

DOI: 10.1103/PHYSREVB.78.064517

关键词: Raman scatteringRaman spectroscopyMott scatteringBiological small-angle scatteringScatteringPhonon scatteringAtomic physicsPhysicsX-ray Raman scatteringInelastic scattering

摘要: We have investigated the electronic structure of Mg0.83Al0.17B2 and MgB2 single crystals using x-ray Raman scattering at B-K edge. Utilizing momentum transfer dependence process, together with first-principles multiple calculations, we extracted site symmetry projected density empty B states in presence a core hole. In comparison to for pure MgB2, find B--band hole count decrease Fermi level by 35 9%. The -band is relatively stable 4 7% increase compared MgB2. These results shed light on role band filling lowering Tc. Our work opens an application area extraction scheme studies doped systems.

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