作者: R. Windisch , C. Rooman , S. Meinlschmidt , P. Kiesel , D. Zipperer
DOI: 10.1063/1.1397758
关键词: Scattering 、 Surface finish 、 Materials science 、 Quantum 、 Semiconductor 、 Light-emitting diode 、 Gallium arsenide 、 Diode 、 Optics 、 Optoelectronics 、 Quantum efficiency
摘要: The transmission properties of semiconductor surfaces can be changed by surface texturing. We investigate these changes experimentally and find that an enhancement the angle-averaged a factor 2 achieved with optimum texturing parameters. This enhanced provides additional light extraction mechanism for high-efficiency surface-textured light-emitting diodes. External quantum efficiencies 46% 54% are demonstrated before after encapsulation, respectively.