Methods for determining wafer temperature

作者: Paul Janis Timans

DOI:

关键词: Optical path lengthCalibrationAbsorption (electromagnetic radiation)OptoelectronicsRayLayer (electronics)Materials scienceOpticsSystem of measurementTemperature measurementWafer

摘要: Methods and apparatus for wafer temperature measurement calibration of devices may be based on determining the absorption a layer in semiconductor wafer. The determined by directing light towards measuring reflected from below surface upon which incident impinges. Calibration wafers systems arranged configured so that at predetermined angles to is measured other not. Measurements also evaluating degree contrast an image pattern or Other measurements utilize determination optical path length within alongside transmitted light.

参考文章(83)
Ashish Vengsarkar, Sridhar Gollapudi, Anbo Wang, Kent Murphy, Shari Feth, Richard Claus, Sapphire optical fiber interferometer ,(1992)
William G. Breiland, Alexander I. Gurary, Vadim Boguslavskiy, Temperature determination using pyrometry ,(2000)
Thomas Digges, Stephen H. Jones, David Abdallah, Carolyn DeMain, Robert A. Ross, Optical micrometer for measuring thickness of transparent wafers ,(1996)
Cecil J. Davis, Wayne G. Fisher, John D. Lawrence, Lee M. Loewenstein, Semiconductor wafer temperature measurement system and method ,(1991)
Leonard C. Aamodt, John C. Murphy, Optical beam deflection thermal imaging ,(1982)
Ronald A. Powell, Dimitry M. Kirillov, Method and apparatus for temperature measurements ,(1990)
Boris Volf, Alexander I. Gurary, Mikhail Belousov, Calibration wafer and method of calibrating in situ temperatures ,(2005)