Metal-gate high-k reference structure

摘要: Disclosed are embodiments of an integrated circuit structure that incorporates at least two field effect transistors (FETs) have the same conductivity type and essentially identical semiconductor bodies (i.e., material and, thereby conduction valence band energies, source, drain, channel dopant profiles, widths lengths, etc.). However, due to different gate structures with effective work functions, one which is between energies bodies, these FETs selectively threshold voltages, independent process variables. Furthermore, through use high-k dielectric materials and/or metal conductor materials, allow voltage differences less than 700 mV be achieved so can function power supply voltages below 1.0V. Also disclosed method for forming structure.