Chapter 2 Band Gaps and Light Emission in Si/SiGe Atomic Layer Structures

摘要: Publisher Summary This chapter reviews various aspects of Si/Ge heterostructures and superlattices, including thin pure layers embedded in Si, Si m Ge n short period some newer developments islands Si. Such structures alter the crystal symmetry, which may lead to enhanced optical interband matrix elements. There have been many different attempts during past ten years achieve efficient light emission near infrared regime using heterostructures. Some these concepts are discussed this chapter. None efforts led a high enough quantum efficiency at room temperature such that an application as emitter would appear on horizon. The heterostructure research, however, resulted excellent understanding band ability control material combinations atomic scale. allows possibility for precise structure engineering other applications microelectronics optoelectronics.