作者: Alberto HERRERA-GOMEZ , Yongjian SUN , Francisco-Servando AGUIRRE-TOSTADO , Cherngye HWANG , Pierre-Giovanni MANI-GONZALEZ
关键词: Carbon film 、 Transmission electron microscopy 、 Chemistry 、 Stoichiometry 、 Chemical species 、 Layer (electronics) 、 X-ray photoelectron spectroscopy 、 Diamond-like carbon 、 Spectral line 、 Analytical chemistry
摘要: The structure of 3 nm and 15 diamond-like carbon films, grown on Si(001) by filtered cathodic arc, was studied angle-resolved X-ray photoelectron spectroscopy (ARXPS) transmission electron microscopy (TEM). ARXPS data deconvolved employing simultaneous-fitting, which allowed for a clear deconvolution the Si 2p C 1s spectra into their different chemical contributions. An analysis take-off angle dependence peak intensities an independent identification physical origin species. It shown that at 283.3 eV 99.6 correspond to SiC, C/Si interface film consists stoichiometric approximately 1 SiC layer. To quantify sp(3)-sp(2) ratio it necessary take account not only associated XPS-peak intensities, but also dependence. thickness films obtained through closely agrees with cross-sectional TEM images.