Structure of Ultra-Thin Diamond-Like Carbon Films Grown with Filtered Cathodic Arc on Si(001)

作者: Alberto HERRERA-GOMEZ , Yongjian SUN , Francisco-Servando AGUIRRE-TOSTADO , Cherngye HWANG , Pierre-Giovanni MANI-GONZALEZ

DOI: 10.2116/ANALSCI.26.267

关键词: Carbon filmTransmission electron microscopyChemistryStoichiometryChemical speciesLayer (electronics)X-ray photoelectron spectroscopyDiamond-like carbonSpectral lineAnalytical chemistry

摘要: The structure of 3 nm and 15 diamond-like carbon films, grown on Si(001) by filtered cathodic arc, was studied angle-resolved X-ray photoelectron spectroscopy (ARXPS) transmission electron microscopy (TEM). ARXPS data deconvolved employing simultaneous-fitting, which allowed for a clear deconvolution the Si 2p C 1s spectra into their different chemical contributions. An analysis take-off angle dependence peak intensities an independent identification physical origin species. It shown that at 283.3 eV 99.6 correspond to SiC, C/Si interface film consists stoichiometric approximately 1 SiC layer. To quantify sp(3)-sp(2) ratio it necessary take account not only associated XPS-peak intensities, but also dependence. thickness films obtained through closely agrees with cross-sectional TEM images.

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