Transport in nanoscale silicon clusters

摘要: Abstract Resonant tunneling in a double barrier, three-dimensional quantum well system is observed. As the applied potential brings discrete energy levels to Fermi level of contact, electrons are transmitted across diode. Due presence deep depletion Si substrate, electron further accelerated mainly ballistically toward contact resulting gain manifested an increase current. The separations between successive peaks larger than what can be understood from theory based on charging spherical nanocrystal. trapped charges appear located at oxide-Si interfaces. small size together with large barrier height a- SiO 2 result transport solids energies order magnitude higher conventional hot devices.