Epitaxial Fe films on (100)GaAs substrates by ion beam sputtering

作者: Randal W. Tustison , Thomas Varitimos , Jerrold Van Hook , Ernst F. Schloemann

DOI: 10.1063/1.98474

关键词: MagnetizationOptoelectronicsMagnetic hysteresisSputteringEpitaxyX-ray crystallographyThin filmMaterials scienceNuclear magnetic resonanceAnisotropySingle crystal

摘要: We report the successful growth of single‐crystal Fe films on GaAs substrates in (100) orientation by ion beam sputtering. Magnetic measurements show that crystalline anisotropy field these is substantially same as bulk single crystals.

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