作者: Randal W. Tustison , Thomas Varitimos , Jerrold Van Hook , Ernst F. Schloemann
DOI: 10.1063/1.98474
关键词: Magnetization 、 Optoelectronics 、 Magnetic hysteresis 、 Sputtering 、 Epitaxy 、 X-ray crystallography 、 Thin film 、 Materials science 、 Nuclear magnetic resonance 、 Anisotropy 、 Single crystal
摘要: We report the successful growth of single‐crystal Fe films on GaAs substrates in (100) orientation by ion beam sputtering. Magnetic measurements show that crystalline anisotropy field these is substantially same as bulk single crystals.