Electric-field-induced strain-mediated magnetoelectric effect in CoFeB-MgO magnetic tunnel junctions

摘要: Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones modern physics towards developing most energy-efficient data storage. Conventionally, magnetoelectric achieved in single-phase multiferroics or composite nanostructures consisting ferromagnetic ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated effect ultrathin CoFeB/MgO tunnel junction employing non-piezoelectric material, which a vitally important structure for spintronic devices, by using dynamical piezoresponse force microscopy measurement techniques. We show that applied electric-field induces strain few atomic layers dielectric MgO transferred to magnetostrictive CoFeB layer, resulting magnitude up 80.8 V cm-1 Oe-1 under -0.5 V. The demonstrated with field junctions significant step exploring magnetoelectrically controlled devices low-power high density storage applications.