Open-Circuit Voltage Improvement of InAs/GaAs Quantum-Dot Solar Cells Using Reduced InAs Coverage
作者： Christopher G. Bailey , David V. Forbes , Stephen J. Polly , Zachary S. Bittner , Yushuai Dai
DOI: 10.1109/JPHOTOV.2012.2189047
关键词: Current density 、 Quantum dot 、 Solar cell 、 Superlattice 、 Absolute efficiency 、 Gallium arsenide 、 Voltage 、 Optoelectronics 、 Open-circuit voltage 、 Materials science
摘要: Ten-, 20-, and 40-layer InAs/GaAs quantum-dot (QD)-embedded superlattice solar cells were compared with a baseline GaAs p-i-n cell. Proper strain balancing reduction of InAs coverage value in the region QD embedded devices enabled systematic increase short-circuit current density layers (0.02-mA/cm $^2$ /QD layer) minimal open-circuit voltage loss (∼50 mV). The improvement was found to be due reduced nonradiative recombination resulting from larger defective QDs effective management. device exceeded cell by 0.5% absolute efficiency improving relative 3.6%.
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