Magnetoelectronic memories last and last
作者： M. Johnson
DOI: 10.1109/6.819927
关键词: Nano-RAM 、 Orders of magnitude (temperature) 、 Materials science 、 State (computer science) 、 Non-volatile memory 、 Semiconductor 、 Reliability (semiconductor) 、 Electrical engineering 、 Transistor 、 Electronics
摘要: … reliability of semiconducting floating-gate nonvolatile memory and have achieved cell sizes … Magnetoelectronic devices may be grouped according to the physics of their operation into …
acm.org 
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