Time-resolved photoluminescence characterization of nm-sized silicon crystallites in SiO2
作者： J Linnros , A Galeckas , N Lalic , V Grivickas
DOI: 10.1016/S0040-6090(96)09359-5
关键词: Crystallite 、 Diffusion 、 Exciton 、 Analytical chemistry 、 Silicon 、 Photoluminescence 、 Exponential decay 、 Silicon dioxide 、 Nanotechnology 、 Passivation 、 Materials science
摘要: Abstract Time-resolved photoluminescence (PL) decays have been measured for silicon nanocrystallites embedded in dioxide. The were formed by implanting Si ions at various doses into thermally grown SiO2 films, followed thermal annealing 1100 °C. Silicon dioxide films of thickness the range 100–1000 A used. results show that PL could be detected even as thin 100 A. spectral and time-dependence characteristics are very similar to those porous Si, exhibiting a clear stretched exponential behavior. extracted parameters τ β are, however, somewhat higher value nanocrystallites. This may tentatively attributed high degree passivation nano crystallites oxide matrix. An observed redshift thinner oxides implantation explained considering excess concentration along profile. decay suggests carrier trapping diffusion occurs between adjacent nanocrystallites, most likely form excitons. © 1997 Elsevier Science S.A. All rights reserved.
harvard.edu
elsevier.com
sci-hub.se 参考文章(17)
P Mutti, G Ghislotti, L Meda, E Grilli, M Guzzi, L Zanghieri, R Cubeddu, A Pifferi, P Taroni, A Torricelli, Photoluminescence studies of light emission from silicon implanted and annealed SiO2 layers Thin Solid Films. ,vol. 276, pp. 88- 91 ,(1996) , 10.1016/0040-6090(95)08050-3
P. Mutti, G. Ghislotti, S. Bertoni, L. Bonoldi, G. F. Cerofolini, L. Meda, E. Grilli, M. Guzzi, Room‐temperature visible luminescence from silicon nanocrystals in silicon implanted SiO2 layers Applied Physics Letters. ,vol. 66, pp. 851- 853 ,(1995) , 10.1063/1.113408
Tsutomu Shimizu‐Iwayama, Setsuo Nakao, Kazuo Saitoh, None, Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si Applied Physics Letters. ,vol. 65, pp. 1814- 1816 ,(1994) , 10.1063/1.112852
D. J. DiMaria, J. R. Kirtley, E. J. Pakulis, D. W. Dong, T. S. Kuan, F. L. Pesavento, T. N. Theis, J. A. Cutro, S. D. Brorson, Electroluminescence studies in silicon dioxide films containing tiny silicon islands Journal of Applied Physics. ,vol. 56, pp. 401- 416 ,(1984) , 10.1063/1.333979
Shinji Hayashi, Takeshi Nagareda, Yoshihiko Kanzawa, Keiichi Yamamoto, Photoluminescence of Si-Rich SiO2Films: Si Clusters as Luminescent Centers Japanese Journal of Applied Physics. ,vol. 32, pp. 3840- 3845 ,(1993) , 10.1143/JJAP.32.3840
J.P. Biersack, L.G. Haggmark, A Monte Carlo computer program for the transport of energetic ions in amorphous targets Nuclear Instruments and Methods. ,vol. 174, pp. 257- 269 ,(1980) , 10.1016/0029-554X(80)90440-1
Liang‐Sheng Liao, Xi‐Mao Bao, Xiang‐Qin Zheng, Ning‐Sheng Li, Nai‐Ben Min, Blue luminescence from Si+‐implanted SiO2 films thermally grown on crystalline silicon Applied Physics Letters. ,vol. 68, pp. 850- 852 ,(1996) , 10.1063/1.116554
G. Mauckner, K. Thonke, T. Baier, T. Walter, R. Sauer, Temperature‐dependent lifetime distribution of the photoluminescence S‐band in porous silicon Journal of Applied Physics. ,vol. 75, pp. 4167- 4170 ,(1994) , 10.1063/1.355999
K. V. Shcheglov, C. M. Yang, K. J. Vahala, Harry A. Atwater, Electroluminescence and photoluminescence of Ge‐implanted Si/SiO2/Si structures Applied Physics Letters. ,vol. 66, pp. 745- 747 ,(1995) , 10.1063/1.114080
V. Lehmann, U. Gösele, Porous silicon formation: A quantum wire effect Applied Physics Letters. ,vol. 58, pp. 856- 858 ,(1991) , 10.1063/1.104512