Identification of the dissociative and kick-out diffusion mechanisms of Zn diffusion in GaAs by photoluminescence analysis

作者: Hong Ye , Liangliang Tang , Qing Ni

DOI: 10.1016/J.MSEB.2015.03.005

关键词: Tail regionWaferMolecular physicsAnalytical chemistryDiffusion (business)PhotoluminescenceAlloyVacancy defectMaterials science

摘要: Abstract Most investigations on Zn diffusion in GaAs were processed using the Zn–As alloy sources to prevent As atoms from escaping wafers, while we found that would change fundamentally if Zn–Ga used. The Ga suppressed formation of high-concentration surface region profiles, thus converting a kink-and-tail profile into box profile. photoluminescence (PL) analysis was used identify mechanisms. vacancy defects profile, indicating dissociative mechanism dominated; PL spectrum tail and main showed same signals, no found, kick-out dominated.

参考文章(22)
Koun Shirai, Toshiyuki Michikita, Hiroshi Katayama-Yoshida, Molecular Dynamics Study of Fast Diffusion of Cu in Silicon Japanese Journal of Applied Physics. ,vol. 44, pp. 7760- 7764 ,(2005) , 10.1143/JJAP.44.7760
S.P. Nicols, H. Bracht, M. Benamara, Z. Liliental-Weber, E.E. Haller, Mechanism of zinc diffusion in gallium antimonide Physica B: Condensed Matter. ,vol. 308-310, pp. 854- 857 ,(2001) , 10.1016/S0921-4526(01)00913-9
Y. Kamon, H. Harima, A. Yanase, H. Katayama-Yoshida, Ultra-fast diffusion mechanism of the late 3d transition metal impurities in silicon Physica B-condensed Matter. ,vol. 308, pp. 391- 395 ,(2001) , 10.1016/S0921-4526(01)00754-2
S. Reynolds, D. W. Vook, J. F. Gibbons, Open‐tube Zn diffusion in GaAs using diethylzinc and trimethylarsenic: Experiment and model Journal of Applied Physics. ,vol. 63, pp. 1052- 1059 ,(1988) , 10.1063/1.340006
Nguyen Hong Ky, Lorenzo Pavesi, D Araujo, JD Ganiere, FK Reinhart, A Model for the Zn Diffusion in Gaas by a Photoluminescence Study Journal of Applied Physics. ,vol. 69, pp. 7585- 7593 ,(1991) , 10.1063/1.347527
Kazuhito Matsukawa, Nobuyoshi Hattori, Shigeto Maegawa, Koun Shirai, Hiroshi Katayama-Yoshida, Gettering mechanism of transition metals in silicon calculated from first principles Physica B-condensed Matter. ,vol. 376, pp. 224- 226 ,(2006) , 10.1016/J.PHYSB.2005.12.059
B. Tuck, M. A. H. Kadhim, Anomalous diffusion profiles of zinc in GaAs Journal of Materials Science. ,vol. 7, pp. 585- 591 ,(1972) , 10.1007/BF00761957
H. Bracht, S. Brotzmann, Zinc diffusion in gallium arsenide and the properties of gallium interstitials Physical Review B. ,vol. 71, pp. 115216- ,(2005) , 10.1103/PHYSREVB.71.115216
Leonard R. Weisberg, Joseph Blanc, Diffusion with Interstitial-Substitutional Equilibrium. Zinc in GaAs Physical Review. ,vol. 131, pp. 1548- 1552 ,(1963) , 10.1103/PHYSREV.131.1548