作者: Hong Ye , Liangliang Tang , Qing Ni
DOI: 10.1016/J.MSEB.2015.03.005
关键词: Tail region 、 Wafer 、 Molecular physics 、 Analytical chemistry 、 Diffusion (business) 、 Photoluminescence 、 Alloy 、 Vacancy defect 、 Materials science
摘要: Abstract Most investigations on Zn diffusion in GaAs were processed using the Zn–As alloy sources to prevent As atoms from escaping wafers, while we found that would change fundamentally if Zn–Ga used. The Ga suppressed formation of high-concentration surface region profiles, thus converting a kink-and-tail profile into box profile. photoluminescence (PL) analysis was used identify mechanisms. vacancy defects profile, indicating dissociative mechanism dominated; PL spectrum tail and main showed same signals, no found, kick-out dominated.