Electric and pyroelectric properties of AlN thin films deposited by reactive magnetron sputtering on Si substrate

摘要: Abstract Electric and pyroelectric properties of AlN layers deposited on Si substrates with different resistivities were investigated. The dielectric constant was found to be around 12, while the conductance determined from dc current measurements in 10−9 10−10 S range. performed voltage mode using two types IR sources: a laser diode 800 nm wavelength black body at 700 °C. A peculiar behavior observed for signal recorded when used as source. It that substrate is introducing component, due photogenerated carriers, which adding generated by layer. This component strongly dependent resistivity substrate. For doped (Si++) into represents only 10% voltage. electronic grade about 100 times larger than effect can an optical amplification signal. frequency dependence source typical detector. value large 12.4 μC m−2 K−1 obtained coefficient estimation low modulation frequencies beam. However, affected electrical As it results dependent, above being valid very small temperature variation. also electric are crystalline quality