A subharmonically pumped resistive dual-HEMT-mixer
作者： H. Zirath
DOI: 10.1109/MWSYM.1991.147147
关键词: High-electron-mobility transistor 、 Materials science 、 Amplitude 、 Phase (waves) 、 Electrical engineering 、 Resistive touchscreen 、 Optoelectronics 、 Electronic mixer 、 Local oscillator 、 Intermediate frequency 、 Harmonic balance
摘要: A novel subharmonically pumped high electron mobility transistor (HEMT)-based resistive mixer is described. The based on a paralleled HEMT-configuration where the LO (local oscillator) applied to gates with same amplitude but opposite phase. prototype was constructed at X-band. conversion loss of 6.5 dB measured an LO-power level 12 dB/sub m/. LO-IF (intermediate frequency) and LO-RF isolation obtained intrinsically due LO-cancellation. HEMT-devices were fabricated characterized, nonlinear device model developed used in harmonic balance simulations. >
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