Method for reducing program disturb during self-boosting in a NAND flash memory
作者： Narbeh Derhacobian , Hao Fang
DOI:
关键词: Nand flash memory 、 Line (text file) 、 Computer hardware 、 Word (computer architecture) 、 Biasing 、 Boosting (machine learning) 、 Bit line 、 Computer science 、 Voltage
摘要: A NAND flash memory system is programmed with minimal program disturb and pass during self-boosting without resorting to impurity implantation for bit line isolation, p-well biasing or techniques. voltage applied a selected word in the form of plurality short pulses while synchronously applying pulsed unselected lines until cell programmed. The duration time between are chosen minimize cells, especially cells on line, causing any array.
lens.org 参考文章(1)
Sameer S. Haddad, Pau-Ling Chen, Optimized biasing scheme for NAND read and hot-carrier write operations ,(1997)