SEMICONDUCTOR LASER DEVICE
作者： Saito Hideaki
DOI:
关键词: Dipole 、 Semiconductor 、 Active layer 、 Valence electron 、 Layer (electronics) 、 Network layer 、 Doping 、 Capacitance 、 Optoelectronics 、 Materials science
摘要: PURPOSE: To provide a high efficient semiconductor laser device in low threshold value current by controlling the band discontinuous amount of an active layer and clad for suppressing overflow carriers to layer. CONSTITUTION: The doping layers 4, 7 different n type p polarities are provided on both sides hetero interfaces 3 8. By capacitance this dipole structure, valence electron interface can be increased. On other hand, structure made 9, 12 is formed 13 8 so as increase conductive amount. Through these procedures, holes electrons from suppressed.
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