Critical conductivity at the magnetic-field-induced metal-insulator transition in n-GaAs and n-InSb
作者： D J Newson , M Pepper
DOI: 10.1088/0022-3719/19/21/005
关键词: Metal–insulator transition 、 Sigma 、 Magnetic field 、 Semiconductor 、 Conductivity 、 Density of states 、 Condensed matter physics 、 Materials science
摘要: The authors present results on the magnetic-field-induced metal-insulator transition in direct-gap III-V semiconductors GaAs and InSb. experiments were carried out at temperatures (T) as low 40 mK magnetic fields of up to 9T. They find that transition, conductivity, sigma , can be expressed form = zeta T13/, where is a constant depending density states, giving good quantitative agreement with recent theories interaction-driven due Finkel'shtein (1983), extended by Altshuler Aronov (1983) Castellani coworkers (1984).
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