X-ray diffraction study of crystals under a static electric field
作者： M.T. Sebastian
DOI: 10.1016/0960-8974(93)90025-Y
关键词: Silicon 、 Intensity (heat transfer) 、 Diffraction 、 X-ray crystallography 、 Materials science 、 Semiconductor 、 Electrical conductor 、 Condensed matter physics 、 Electric field 、 Orders of magnitude (temperature) 、 Optics
摘要: Abstract This paper gives an overview of the effect electric field on diffracted intensity and contrast X-ray topographs recorded from crystals non-linear electro-optic materials, ionic conductors, semiconductors, insulators ferro-electric materials. Application a dc rise to change in by several orders magnitude topographs. The is illustrated with examples α-LiIO 3 , KTiOPO 4 LiN 2 H 5 SO KNbO LiNH quartz, silicon etc. mechanism for it discussed.
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