An electro-fluidic assembly technique for integration of III-V devices onto silicon

作者: C.D. Nordquist , P.A. Smith , T.S. Mayer

DOI: 10.1109/ISCS.2000.947143

关键词: FluidicsMaterials scienceSiliconElectric fieldProcess (computing)Carrier fluidDie (integrated circuit)NanotechnologySi substrateElectrohydrodynamics

摘要: This paper introduces an electro-fluidic assembly approach that provides a potential route towards low-cost, parallel heterogeneous integration process suitable for III-V device integration. In this process, nonuniform electric fields are used to attract devices from carrier fluid Si substrate patterned with predefined alignment locations. We have demonstrated the utility of by assembling Au die using circular apertures defined on oxidized substrate.

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