Power semiconductor devices and methods of manufacture

摘要: Various embodiments for improved power devices as well their methods of manufacture, packaging and circuitry incorporating the same use in a wide variety electronic applications are disclosed. One aspect invention combines number charge balancing techniques other reducing parasitic capacitance to arrive at different with voltage performance, higher switching speed, lower on-resistance. Another provides termination structures low, medium high devices. Improved fabrication provided according aspects invention. Improvements specific processing steps, such formation trenches, dielectric layers inside mesa processes substrate thickness, among others, presented. According another invention, balanced incorporate temperature current sensing elements diodes on die. Other improve equivalent series resistance (ESR) devices, additional chip device provide improvements