Characterization of sol-gel prepared WO3 thin films as a gas sensor

作者: C. Cantalini , M. Z. Atashbar , Y. Li , M. K. Ghantasala , S. Santucci

DOI: 10.1116/1.581698

关键词: Analytical chemistryTungsten trioxideMicrostructureAmorphous solidCrystalliteCarbon filmScanning electron microscopeMaterials scienceX-ray photoelectron spectroscopyAnnealing (metallurgy)

摘要: Tungsten trioxide (WO3) thin films have been prepared by the sol-gel process and annealed at different temperatures of 400, 500, 600, 700 °C for 1 h. The morphology, microstructure, crystalline structure, composition analyzed using scanning electron microscopy (SEM), x-ray diffraction, Rutherford backscattering spectroscopy (RBS), photoelectron (XPS) techniques. SEM analysis showed that 400 °C are smooth uniform. However, these evolved as granular an annealing temperature 500 °C. still higher two distinct grains shapes sizes. below amorphous. Annealing 500 °C resulted in having polycrystalline structure. RBS XPS characterization revealed stoichiometric. above this becoming off-stoichiometric. electrical resistance increased 18 times when exposed to 175 ppb O3 gas compared air exposure, with response time being short 1–2 min.

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