Ion bombardment effects in polymers

作者: W. L. Brown

DOI: 10.1080/00337578608206104

关键词: ChemistryPhotochemistryArgonPolymerFluenceMetallizingIon bombardmentOrganic chemistryChemical bondCarbonizationPolymerization

摘要: Ion bombardment of organic materials produces dramatic changes in their properties associated with disruption and rearrangement the original chemical bonding formation new molecular produ...

参考文章(21)
George Raymond Brewer, J. P. Ballantyne, Electron-beam technology in microelectronic fabrication Academic Press. ,(1980)
Kevin J. Orvek, Craig Huffman, Carbonized layer formation in ion implanted photoresist masks Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms. ,vol. 7, pp. 501- 506 ,(1985) , 10.1016/0168-583X(85)90421-5
R. T. Shin, J. A. Kong, Scattering of electromagnetic waves from a randomly perturbed quasiperiodic surface Journal of Applied Physics. ,vol. 56, pp. 10- 21 ,(1984) , 10.1063/1.333743
P. De Mayo, H. Shizuka, Photochemical synthesis. 49. Thione photochemistry. 9. Mechanism of photocycloaddition of thiobenzophenone at 366 nm Journal of the American Chemical Society. ,vol. 95, pp. 3942- 3947 ,(1973) , 10.1021/JA00793A019
Yoshio Yamashita, Ken Ogura, Mitsumasa Kunishi, Ryuzi Kawazu, Seigo Ohno, Yasuo Mizokami, Crosslinking positive resist for deep UV photolithography and its application to LSI fabrication processes Journal of Vacuum Science and Technology. ,vol. 16, pp. 2026- 2029 ,(1979) , 10.1116/1.570335
M. Nagashima, M. Takenaga, T. Yamashita, T. Yoshikane, S. Kagata, Y. Okino, K. Kamio, Experimental estimation of an optical disk system with V‐shaped grooves Applied Physics Letters. ,vol. 43, pp. 4- 6 ,(1983) , 10.1063/1.94165
J. K. G. Panitz, D. J. Sharp, C. R. Hills, Near‐surface microstructural modifications in low energy hydrogen ion bombarded silicon Journal of Vacuum Science and Technology. ,vol. 3, pp. 1- 5 ,(1985) , 10.1116/1.573201
M. W. Geis, J. N. Randall, T. F. Deutsch, P. D. DeGraff, K. E. Krohn, L. A. Stern, Self‐developing resist with submicrometer resolution and processing stability Applied Physics Letters. ,vol. 43, pp. 74- 76 ,(1983) , 10.1063/1.94126
G. M. Mladenov, B. Emmoth, Polymethyl methacrylate sensitivity variation versus the electronic stopping power at ion lithography exposure Applied Physics Letters. ,vol. 38, pp. 1000- 1002 ,(1981) , 10.1063/1.92244