Strain-induced diffusion in a strained Si1−xGex/Si heterostructure
作者： Y. S. Lim , J. Y. Lee , H. S. Kim , D. W. Moon
DOI: 10.1063/1.1327280
关键词: Condensed matter physics 、 Activation energy 、 Thermal diffusivity 、 Potential gradient 、 Diffusion 、 Materials science 、 Analytical chemistry 、 Superlattice 、 Heterojunction 、 Strain (chemistry) 、 Relaxation (NMR)
摘要: Diffusivity of a strained heterostructure was theoretically investigated, and general diffusion equations with strain potential were deduced. There an additional diffusivity by the gradient as well concentration gradient. The strain-induced function concentration, its temperature dependence formulated. activation energy measured high-resolution transmission electron microscopy. This result can be generally applied for investigation in heterostructures.
harvard.edu
scitation.org
aip.org 
sci-hub.se 参考文章(12)
John Crank, The mathematics of diffusion ,(1956)
L. Kubler, D. Dentel, J. L. Bischoff, C. Ghica, C. Ulhaq-Bouillet, J. Werckmann, Si adatom surface migration biasing by elastic strain gradients during capping of Ge or Si1−xGex hut islands Applied Physics Letters. ,vol. 73, pp. 1053- 1055 ,(1998) , 10.1063/1.122082
C K Maiti, L K Bera, S Chattopadhyay, Strained-Si heterostructure field effect transistors Semiconductor Science and Technology. ,vol. 13, pp. 1225- 1246 ,(1998) , 10.1088/0268-1242/13/11/002
K. Dettmer, W. Freiman, M. Levy, Yu. L. Khait, R. Beserman, Kinetics of interdiffusion in strained nanometer period Si/Ge superlattices studied by Raman scattering Applied Physics Letters. ,vol. 66, pp. 2376- 2378 ,(1995) , 10.1063/1.113988
Bert Voigtländer, Martin Kästner, Evolution of the strain relaxation in a Ge layer on Si(001) by reconstruction and intermixing Physical Review B. ,vol. 60, pp. R5121- R5124 ,(1999) , 10.1103/PHYSREVB.60.R5121
N. E. B. Cowern, P. C. Zalm, P. van der Sluis, D. J. Gravesteijn, W. B. de Boer, Diffusion in strained Si(Ge). Physical Review Letters. ,vol. 72, pp. 2585- 2588 ,(1994) , 10.1103/PHYSREVLETT.72.2585
H. Klauk, T. N. Jackson, S. F. Nelson, J. O. Chu, Thermal stability of undoped strained Si channel SiGe heterostructures Applied Physics Letters. ,vol. 68, pp. 1975- 1977 ,(1996) , 10.1063/1.115644
G. L. McVay, A. R. DuCharme, Diffusion of Ge in SiGe alloys Physical Review B. ,vol. 9, pp. 627- 631 ,(1974) , 10.1103/PHYSREVB.9.627
Paul G. Shewmon, Diffusion in solids ,(1963)
J.‐M. Baribeau, R. Pascual, S. Saimoto, Interdiffusion and strain relaxation in (SimGen)p superlattices Applied Physics Letters. ,vol. 57, pp. 1502- 1504 ,(1990) , 10.1063/1.103377