Band engineering and rational design of high-performance thermoelectric materials by first-principles

作者: Lili Xi , Jiong Yang , Lihua Wu , Jihui Yang , Wenqing Zhang

DOI: 10.1016/J.JMAT.2016.05.004

关键词: NanotechnologyDegeneracy (mathematics)Work (thermodynamics)Thermoelectric effectElectronic band structureMaterials scienceThermoelectric materialsPhononCrystalEngineering physicsElectrical conductor

摘要: … By solid solutions, band convergence was realized in Mg 2 Si … There are 32 atoms and two large voids in one conventional … is one- and two-dimensional-like for quantum wells and bulk …

参考文章(142)
J. H. Kim, D. Seong, G. H. Ihm, C. Rhee, Measurement of the Thermal Conductivity of Si and GaAs Wafers Using the Photothermal Displacement Technique International Journal of Thermophysics. ,vol. 19, pp. 281- 290 ,(1998) , 10.1023/A:1021467606454
David Michael Rowe, CRC Handbook of Thermoelectrics CRC Press. ,(1995) , 10.1201/9781420049718
Cong Xiao, Dingping Li, Zhongshui Ma, Unconventional thermoelectric behaviors and enhancement of figure of merit in Rashba spintronic systems Physical Review B. ,vol. 93, pp. 075150- ,(2016) , 10.1103/PHYSREVB.93.075150
B. R. Nag, Theory of electrical transport in semiconductors Pergamon Press. ,(1972)
Kouta Mori, Hirofumi Sakakibara, Hidetomo Usui, Kazuhiko Kuroki, Ideal band shape in the potential thermoelectric material CuAlO 2 : Comparison to Na x CoO 2 Physical Review B. ,vol. 88, pp. 075141- ,(2013) , 10.1103/PHYSREVB.88.075141
X. Shi, H. Kong, C.-P. Li, C. Uher, J. Yang, J. R. Salvador, H. Wang, L. Chen, W. Zhang, Low thermal conductivity and high thermoelectric figure of merit in n-type BaxYbyCo4Sb12 double-filled skutterudites Applied Physics Letters. ,vol. 92, pp. 182101- ,(2008) , 10.1063/1.2920210
Jung Young Cho, Xun Shi, J. R. Salvador, J. Yang, H. Wang, Thermoelectric properties of ternary diamondlike semiconductors Cu2Ge1+xSe3 Journal of Applied Physics. ,vol. 108, pp. 073713- ,(2010) , 10.1063/1.3488021
Yasuhiro Ono, Shingo Inayama, Hideaki Adachi, Tsuyoshi Kajitani, Thermoelectric Properties of Doped Half-Heuslers NbCoSn1-xSbxand Nb0.99Ti0.01CoSn1-xSbx Japanese Journal of Applied Physics. ,vol. 45, pp. 8740- 8743 ,(2006) , 10.1143/JJAP.45.8740