Methods of forming plurality of capacitor devices
作者： Thomas Graettinger , Marsela Pontoh , H. Manning
DOI:
关键词: Capacitor 、 Electronic engineering 、 Structural integrity 、 Dielectric 、 Electrode 、 Materials science 、 Electrically conductive 、 Electrical conductor 、 Composite material
摘要: The invention includes semiconductor constructions, and also methods of forming pluralities capacitor devices. An exemplary method the conductive storage node material within openings in an insulative to form containers. A retaining structure lattice is formed physical contact with at least some containers, subsequently removed expose outer surfaces can alleviate toppling or other loss structural integrity container structures. electrically containers correspond first electrodes. After sidewalls are exposed, dielectric along exposed sidewalls. Subsequently, a second electrode over material. electrodes, together material, plurality
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