作者: Rui Zhu , Yong Guo
DOI: 10.1063/1.2798515
关键词: Scattering 、 Physics 、 Noise (electronics) 、 Condensed matter physics 、 Quantum noise 、 Electronic band structure 、 Shot noise 、 Fermi level 、 Fano factor 、 Quantum tunnelling
摘要: The current shot noise behavior in resonant tunneling step-barrier structures is investigated based on the standard scattering approach. relations between and applied bias, Fermi energies, as well structural parameters are revealed. By making a comparison of among single square-barrier structures, double-barrier distinct curve shape extremely large suppression revealed structures. It shown that valley occurs at bias where peak locates Fano factor drops down to minimum bottom. also found larger for chemical potentials maximal with close 0.05 appears particular structure configuration. These results helpful improve signal-to-noise ratio quantum devices resonant-tunn...