作者: Kohei Uosaki , Shen Ye , Toshihiro Kondo , Hideo Naohara
DOI: 10.1007/978-1-4615-0775-8_2
关键词: Noble metal 、 Metalorganic vapour phase epitaxy 、 Chemical vapor deposition 、 Layer (electronics) 、 Deposition (phase transition) 、 Nanotechnology 、 Epitaxy 、 Thin film 、 Molecular beam epitaxy 、 Materials science
摘要: It is well-known that the physical and chemical properties of an ultra thin metal layer on a foreign substrate are different from those bulk metal.1,2 The establishment preparation method with ordered structure understanding origin its unique very important both for fundamental science industrial applications. epitaxial growth well-defined metals has been achieved by vapor deposition, molecular beam epitaxy (MBE), metalorganic deposition (MOCVD) under condition.3,4 Compared to these techniques in vacuum, electrochemical economical easy because expensive vacuum equipments not necessary deposition. Unfortunately, however, quality electrodeposited layers usually low. Recent development electrochemistry single crystal electrode situ surface characterization such as scanning tunneling microscopy (STM) X-ray scattering (SXS) atomic resolution make control possible.5