Growth and properties of single crystalline GaN substrates and homoepitaxial layers

摘要: Abstract It is shown that high quality crystals of III–V nitrides can be grown at gas pressure (up to 20 kbar) and temperature 2000 K). From the analysis thermodynamic properties AlN, GaN InN, which are briefly summarized in paper, it follows best conditions for crystal growth available pressures achieved GaN. The crystallization AlN less efficient due relatively low solubility liquid Al. possibility InN strongly limited, since this compound loses its stability T > 600 °C, even 2 GPa N pressure. Recently, quality, transparent colorless, 5 mm platelets have been from solution gallium up kbar. mechanisms nucleation discussed on basis experimental results. Structural, electrical optical these reported paper. used as substrates homoepitaxial by MOCVD. Both n- p-type layers obtained doping with Si Mg. At (4.2 K) very strong narrow PL lines 3.4666 eV (FWHM = 1.0 meV) assigned an exciton bound a neutral acceptor 3.4711 1.3 3.4719 excitons two donors found undoped layers.