Effects of grain boundaries on the channel conductance of SOl MOSFET's
作者： J.G. Fossum , A. Ortiz-Conde
关键词: MOSFET 、 Electrical engineering 、 Electron mobility 、 Condensed matter physics 、 Silicon on insulator 、 Conductance 、 Materials science 、 Field-effect transistor 、 Grain boundary 、 Communication channel 、 Threshold voltage
摘要: A physical model that describes the effects of grain boundaries on linear-region (strong-inversion) channel conductance SOI (polysilicon silicon-dioxide) MOSFET's is developed and supported experimentally. The predicts an effective turn-on characteristic occurs beyond strong-inversion threshold, henceforth defines "carrier mobility threshold voltage" field-effect carrier in channel, which typically higher than actual (intragrain) mobility. These parameters, are defined by properties boundaries, can easily be misinterpreted experimentally as voltage
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