NBTI degradation: From physical mechanisms to modelling
作者： V. Huard , M. Denais , C. Parthasarathy
DOI: 10.1016/J.MICROREL.2005.02.001
关键词: Degradation (telecommunications) 、 Mechanical engineering 、 Negative-bias temperature instability 、 Electronic engineering 、 Stress conditions 、 Characterization (materials science) 、 Engineering 、 Transistor
摘要: An overview of the evolution of transistor parameters under negative bias temperature instability stress conditions commonly observed in p-MOSFETs in recent technologies is presented…
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sci-hub.se 参考文章(17)
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