作者: S. Weisser , E.C. Larkins , K. Czotscher , W. Benz , J. Daleiden
DOI: 10.1109/68.491554
关键词: Multiple quantum 、 Cladding (fiber optics) 、 Biasing 、 Laser linewidth 、 Laser 、 Optics 、 Optoelectronics 、 Lasing wavelength 、 Gallium arsenide 、 Ridge waveguide lasers 、 Materials science
摘要: We demonstrate record direct modulation bandwidths from MBE-grown In/sub 0.35/Ga/sub 0.65/As-GaAs multiple-quantum-well lasers with undoped active regions and the upper lower cladding layers grown at different growth temperatures. Short-cavity ridge waveguide achieve CW up to 40 GHz for 6/spl times/130 /spl mu/m/sup 2/ devices a bias current of 155 mA, which is damping limit this structure. further large-signal digital 20 Gb/s (limited by measurement setup) linewidth enhancement factors 1.4 lasing wavelength threshold sim/1.1 mu/m these devices.