作者: Yilin Sun , Changjiu Teng , Dan Xie , Liu Qian , Mengxing Sun
关键词: Responsivity 、 Ambipolar diffusion 、 Photodiode 、 Perovskite (structure) 、 Hysteresis 、 Voltage 、 Materials science 、 Electron mobility 、 Optoelectronics 、 Electric field
摘要: Hysteresis behaviors in the current curves of perovskite-based devices have been widely observed and directly affect device performances. Phototransistors with a channel material CH3NH3PbI3 were fabricated, they showed ambipolar transport characteristics anticlockwise hysteresis hoops. Electric field monochromatic light can narrow wide window from 2.1 V dark to only 0.5 under illumination. A photoexcited high-field-effect carrier mobility 1.05 cm2 V–1 s–1 was achieved at low-operating voltage. The responsivity photosensitivity phototransistor calculated be 1 AW–1 18 000%, respectively. modulation effect voltage bias lights on such has demonstrated. By investigating photo-sensitive carrier-transport perovskite channel, origin attributed charge-trapping process. This work also provides an effective approach achieve photocon...