Gate driving method for synchronous rectifiers in phase-shifted full-bridge converter
作者： Jae-Il Baek , Chong-Eun Kim , Jae-Bum Lee , Han-Shin Youn , Gun-Woo Moon
DOI: 10.1109/ICPE.2015.7167867
关键词: Logic gate 、 Voltage 、 Electronic engineering 、 Full bridge converter 、 Electric power system 、 Power MOSFET 、 Gate driver 、 Capacitor 、 Resistor 、 Electrical engineering 、 Engineering
摘要: In high output current applications such as server power system, a phase-shifted full-bridge (PSFB) converter uses parallel connected MOSFETs in synchronous rectifiers to reduce secondary conduction loss. However, it causes large gate driving Therefore, this paper proposes simple (SRs) method for the PSFB converter. The proposed reduces supply voltage of SRs driver with conventional input resistor and capacitor during overlapping time OR-gated signals SRs. without additional components control techniques, can significantly loss on especially light load conditions. validity is confirmed by experimental results from prototype 400V 750W/12V output.
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