Boron Nitride–Graphene Nanocapacitor and the Origins of Anomalous Size-Dependent Increase of Capacitance

摘要: Conventional wisdom suggests that decreasing dimensions of dielectric materials (e.g., thickness a film) should yield increasing capacitance. However, the quantum capacitance and so-called “dead-layer” effect often conspire to decrease extremely small nanostructures, which is in sharp contrast what expected from classical electrostatics. Very recently, first-principles studies have predicted nanocapacitor made graphene hexagonal boron nitride (h-BN) films can achieve superior capacitor properties. In this work, we fabricate thinnest possible system, essentially consisting only monolayer materials: h-BN with electrodes. We experimentally demonstrate an increase films’ permittivity different stack structures combined graphene. find significant below ∼5 nm, more than 100% by Detailed mechanical calculations suggest t...