Quantum Transient Transport

摘要: Charge transport in semiconductors is a subject of great technological importance, owing to its relevance for microelectronic devices. Also from more basic point view, this phenomenon has received large interest, since it allows the analysis many fundamental aspects solid-state physics, such as electron states, both localized and extended, surface interface structures, electron-phonon interactions, impact ionization, etc. These two discipline are not independent. In fact, same improvements induced by, devoted to, interests, have allowed fabrication sophisticated physical systems with extremely well controlled geometries compositions, where basic-physics research can be performed accuracy. Let us just mention, example, discovery Quantum Hall Effect1 or astonishing achievements quantum interference devices2.