Optoelectronic properties of phosphorus doped p-type ZnO films grown by dual ion beam sputtering
作者： Pankaj Sharma , Aaryashree Aaryashree , Vivek Garg , Shaibal Mukherjee , None
DOI: 10.1063/1.4985246
关键词: Fabrication 、 Optoelectronics 、 Electrical resistivity and conductivity 、 Semiconductor 、 Materials science 、 Heterojunction 、 Thermal conduction 、 Thin film 、 Hall effect 、 Critical point (thermodynamics)
摘要: … PZO films. It was observed that the incorporation of phosphorus into the PZO films was almost uniform with respect to the film thickness confirming the good quality of deposited PZO films…
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