Low voltage high performance semiconductor devices and methods
作者： Luan C. Tran
DOI:
关键词: Materials science 、 Shadow 、 Parasitic capacitance 、 Inverse trigonometric functions 、 Low voltage 、 Optoelectronics 、 Semiconductor device 、 Electrical engineering
摘要: A method for adjusting V t while minimizing parasitic capacitance low voltage high speed semiconductor devices. The uses shadow effects and an angled punch through prevention implant between vertical structures to provide a graded implant. angle is greater than or equal arc tangent of S/H where S the horizontal distance between, H height of, such structures.
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