Electric field and substrate–induced modulation of spin-polarized transport in graphene nanoribbons on A3B5 semiconductors
作者： Victor V. Ilyasov , Chuong V. Nguyen , Igor V. Ershov , Nguyen N. Hieu
DOI: 10.1063/1.4919920
关键词: Condensed matter physics 、 Wide-bandgap semiconductor 、 Electron mobility 、 Graphene 、 Electron 、 Band gap 、 Graphene nanoribbons 、 Materials science 、 Electric field 、 Semiconductor
摘要: In this work, we present the density functional theory calculations of effect an oriented electric field on electronic structure and spin-polarized transport in a one dimensional (1D) zigzag graphene nanoribbon (ZGNR) channel placed wide bandgap semiconductor A3B5 type. Our show that carrier mobility 1D ZGNR/A3B5(0001) type is range from 1.7×104 to 30.5×104 cm2/Vs can be controlled by field. particular, at critical value positive potential, even though hole one-dimensional 8-ZGNR/h-BN for spin down electron subsystems equal zero, increased 4.1×105 up subsystems. We found band gap depend strongly external With these extraordinary properties, become promising materials application...
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