Current-Voltage Characteristics of nBn Structures Based on Mercury Cadmium Telluride Epitaxial Films
作者： A. V. Voitsekhovskii , S. N. Nesmelov , S. M. Dzyadukh , S. A. Dvoretsky , N. N. Mikhailov
DOI: 10.1007/S11182-019-01813-W
关键词: Atmospheric temperature range 、 Mercury cadmium telluride 、 Materials science 、 Barrier layer 、 Molecular beam epitaxy 、 Optoelectronics 、 Current density 、 Electrode 、 Leakage (electronics) 、 Epitaxy
摘要: … The area of the field electrode for each nBn structure was determined using an original microscopic technique. The I–V characteristics of nBn structures were measured on an …
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