Resolution in focused electron- and ion-beam induced processing

作者: Ivo Utke , Vinzenz Friedli , Martin Purrucker , Johann Michler

DOI: 10.1116/1.2789441

关键词: Analytical chemistryElectron beam physical vapor depositionChemical physicsIon beam depositionSiliconIon beam-assisted depositionElectron beam-induced depositionIon beamAdsorptionSurface diffusionChemistry

摘要: The key physical processes governing resolution of gas-assisted focused electron-beam and ion-beam induced deposition etching are analyzed via an adsorption rate model. authors quantify how the balance molecule depletion replenishment determines inside locally irradiated area. Scaling laws derived relating deposits to dissociation, surface diffusion, adsorption, desorption. Supporting results from experiments with a copper metalorganic precursor gas on silicon substrate presented discussed.

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