作者: Ivo Utke , Vinzenz Friedli , Martin Purrucker , Johann Michler
DOI: 10.1116/1.2789441
关键词: Analytical chemistry 、 Electron beam physical vapor deposition 、 Chemical physics 、 Ion beam deposition 、 Silicon 、 Ion beam-assisted deposition 、 Electron beam-induced deposition 、 Ion beam 、 Adsorption 、 Surface diffusion 、 Chemistry
摘要: The key physical processes governing resolution of gas-assisted focused electron-beam and ion-beam induced deposition etching are analyzed via an adsorption rate model. authors quantify how the balance molecule depletion replenishment determines inside locally irradiated area. Scaling laws derived relating deposits to dissociation, surface diffusion, adsorption, desorption. Supporting results from experiments with a copper metalorganic precursor gas on silicon substrate presented discussed.