A High Power Millimeter Passive Solid State Limiter

作者: A. Armstrong , J. Goodrich , W. Moroney

DOI: 10.1109/EUMA.1986.334185

关键词: Power moduleInsertion lossOptoelectronicsPower factorSwitched-mode power supplyLimiterPower (physics)DiodeWaveguideElectrical engineeringEngineering

摘要: The design of an array limiter diodes arranged in series/parallel configuration to form RF activated control window has enhanced significantly the performance solid state components. A monolithic element is formed using high resistivity silicon and fabricated a beam lead for easy mounting waveguide structure. Key features are power, low loss broad band characteristics. Results date have shown 500 watt (1 microsec pulse) power capability with 25 dB limiting 1.0 insertion dual Q-band passive limiter. This ~15 greater handling than conventional packaged diodes.

参考文章(2)
D. Leenov, The silicon PIN diode as a microwave radar protector at megawatt levels IEEE Transactions on Electron Devices. ,vol. 11, pp. 53- 61 ,(1964) , 10.1109/T-ED.1964.15283
J. Goodrich, W. Moroney, A. Armstrong, D. Wheeler, Monolithic control components for high power mm-waves Microwave Journal. ,vol. 28, pp. 197- ,(1985)