Deep level transient spectroscopy (DLTS)

摘要: Many semiconductor defects manifest themselves through deep and shallow levels in the energy gap. Deep may act as electron or hole traps depending on their state of occupancy. Shallow are formed crystals when a foreign atom, which belongs to groups periodic table closest that semiconductor, is introduced into lattice. These used control concentartion holes electrons semiconductor. They can be described by effective mass theory Kohn Luttinger [1], giving hydrogen like spectrum discrete with binding energies E n , written as: $$ {E_n} = \frac{1}{{{n^2}}} {\frac{m}{{2h}}^{ * }}{\left( {\frac{{{q}}}{ \in }} \right)^2} $$ (4.1) where m* an for hole, 2208 static dielectric constant integer. For ground energies, better agreement between calculated measured values obtained using more complicated pseudo-impurity developed Pantelides [2].