作者: Shane McMahon , Ashok Chaudhari , R.D. Vispute , Zhouying Zhao , Harry Efstathiadis
DOI: 10.1016/J.MATLET.2014.11.014
关键词: Annealing (glass) 、 Scanning electron microscope 、 Electron beam processing 、 Thin film 、 Materials science 、 Crystallization 、 Nanocrystalline silicon 、 Silicon 、 Mineralogy 、 Chemical engineering 、 Soda-lime glass
摘要: A highly textured silicon [111] crystalline continuous thin-film film has been deposited on an MgO buffered soda lime glass substrate from aluminum-silicon (Al-Si) eutectic melt using the conventional e-beam deposition. The growth was accomplished heteroepitaxially substrate. resulting oriented then characterized by X-ray diffraction (XRD) and Raman spectroscopy for detection of Si crystallization, as well scanning electron microscopy (SEM). low temperature crystallization method presented here requires no secondary annealing step capability high rate depositions without breaking vacuum. Furthermore, this theoretical feasibility to induce single substrate, subsequently translating a cost effective process with potential play major role in adoption thin solar technology.